170 Products
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| SN: | Part No. | Manufacturer | Description | Stock | Pricing (Sort by price) | Buy |
| 1 | MJE13005 | MULTICOMP PRO | MULTICOMP PRO - MJE13005 - TRANSISTOR, NPN, TO-220 | 11112 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 2 | MPSA06.. | ONSEMI | ONSEMI - MPSA06.. - Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE | 26484 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 3 | HCPL-0501-000E | BROADCOM | BROADCOM - HCPL-0501-000E - OPTOCOUPLER, SMD, TRANSISTOR O/P | 22028 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 4 | K120007 | ARDUINO | ARDUINO - K120007 - Starter Kit, Arduino and Genuino Uno Boards, Instruction Book for 15 Projects (Korean) | 5 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 5 | SPD08P06PGBTMA1 | INFINEON | INFINEON - SPD08P06PGBTMA1 - Power MOSFET, P Channel, 60 V, 8.83 A, 0.3 ohm, TO-252 (DPAK), Surface Mount | 39224 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 6 | VNS1NV04DPTR-E | STMICROELECTRONICS | STMICROELECTRONICS - VNS1NV04DPTR-E - Power MOSFET, N Channel, 45 V, 1.7 A, 0.25 ohm, SOIC, Surface Mount | 16629 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 7 | BSC123N08NS3GATMA1 | INFINEON | INFINEON - BSC123N08NS3GATMA1 - Power MOSFET, N Channel, 80 V, 55 A, 0.0123 ohm, PG-TDSON, Surface Mount | 54311 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 8 | BSS84 | ONSEMI | ONSEMI - BSS84 - Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount | 297000 *LT 7-14 W Days.. |
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Min.: 3000 Mult.: 3000 |
| 9 | IRFR5305TRPBF | INFINEON | INFINEON - IRFR5305TRPBF - Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount | 56268 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 10 | BSC340N08NS3GATMA1 | INFINEON | INFINEON - BSC340N08NS3GATMA1 - Power MOSFET, N Channel, 80 V, 23 A, 0.034 ohm, SuperSOT, Surface Mount | 961342 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 11 | BSC060N10NS3GATMA1 | INFINEON | INFINEON - BSC060N10NS3GATMA1 - Power MOSFET, N Channel, 100 V, 90 A, 6000 µohm, TDSON, Surface Mount | 22698 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 12 | SIR626DP-T1-RE3 | VISHAY | VISHAY - SIR626DP-T1-RE3 - Power MOSFET, N Channel, 60 V, 100 A, 1700 µohm, PowerPAK SO, Surface Mount | 18223 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 13 | IPB120N04S402ATMA1 | INFINEON | INFINEON - IPB120N04S402ATMA1 - Power MOSFET, N Channel, 40 V, 120 A, 1880 µohm, TO-263 (D2PAK), Surface Mount | 3822 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 14 | SIDR870ADP-T1-GE3 | VISHAY | VISHAY - SIDR870ADP-T1-GE3 - Power MOSFET, N Channel, 100 V, 95 A, 6600 µohm, PowerPAK SO, Surface Mount | 33637 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 15 | IPC100N04S51R2ATMA1 | INFINEON | INFINEON - IPC100N04S51R2ATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 1200 µohm, TDSON, Surface Mount | 210 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 16 | NVBG020N090SC1 | ONSEMI | ONSEMI - NVBG020N090SC1 - Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK) | 441 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 17 | DMT8008LFG-7 | DIODES INC. | DIODES INC. - DMT8008LFG-7 - Power MOSFET, N Channel, 80 V, 48 A, 5300 µohm, PowerDI3333, Surface Mount | 1612 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 18 | SIZ980BDT-T1-GE3 | VISHAY | VISHAY - SIZ980BDT-T1-GE3 - Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm | 4711 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 19 | NTMC083NP10M5L | ONSEMI | ONSEMI - NTMC083NP10M5L - Dual MOSFET, N and P Channel, 100 V, 100 V, 4.1 A, 4.1 A, 0.0594 ohm | 11527 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 20 | TLP290-4(E(T | TOSHIBA | TOSHIBA - TLP290-4(E(T - Optocoupler, 4 Channel, SOIC, 16 Pins, 50 mA, 2.5 kV, 50 % | 17460 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 21 | STGD8NC60KDT4 | STMICROELECTRONICS | STMICROELECTRONICS - STGD8NC60KDT4 - IGBT, 15 A, 2.2 V, 62 W, 600 V, TO-252 (DPAK), 3 Pins | 2266 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 22 | PS2811-4-F3-A | RENESAS | RENESAS - PS2811-4-F3-A - Optocoupler, 4 Channel, SSOP, 16 Pins, 50 mA, 2.5 kV, 100 % | 17576 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 23 | PS2801C-4-F3-A | RENESAS | RENESAS - PS2801C-4-F3-A - Optocoupler, 4 Channel, TSSOP, 16 Pins, 30 mA, 2.5 kV, 50 % | 13334 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 24 | TIP42A | MULTICOMP PRO | MULTICOMP PRO - TIP42A - TRANSISTOR, PNP, TO-220 | 3633 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 25 | TIP31A | MULTICOMP PRO | MULTICOMP PRO - TIP31A - Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 3 A, 40 W, TO-220, Through Hole | 1187 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 26 | BULD118D-1 | STMICROELECTRONICS | STMICROELECTRONICS - BULD118D-1 - Bipolar (BJT) Single Transistor, NPN, 400 V, 2 A, 20 W, TO-251, Through Hole | 18895 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 27 | IPD110N12N3GATMA1 | INFINEON | INFINEON - IPD110N12N3GATMA1 - Power MOSFET, N Channel, 120 V, 75 A, 0.011 ohm, TO-252 (DPAK), Surface Mount | 24343 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 28 | STD3NK80Z-1 | STMICROELECTRONICS | STMICROELECTRONICS - STD3NK80Z-1 - Power MOSFET, N Channel, 800 V, 1.25 A, 3.8 ohm, TO-251AA, Through Hole | 2595 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 29 | STP6NK60ZFP | STMICROELECTRONICS | STMICROELECTRONICS - STP6NK60ZFP - MOSFET, N, TO-220FP | 70323 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 30 | BSC060N10NS3GATMA1 | INFINEON | INFINEON - BSC060N10NS3GATMA1 - Power MOSFET, N Channel, 100 V, 90 A, 6000 µohm, TDSON, Surface Mount | 22698 *LT 7-14 W Days.. |
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Min.: 100 Mult.: 5 |
| 31 | BSZ042N06NSATMA1 | INFINEON | INFINEON - BSZ042N06NSATMA1 - Power MOSFET, N Channel, 60 V, 40 A, 4200 µohm, TSDSON, Surface Mount | 132697 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 32 | RJU003N03FRAT106 | ROHM | ROHM - RJU003N03FRAT106 - Power MOSFET, N Channel, 30 V, 300 mA, 0.8 ohm, UMT, Surface Mount | 8144 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 33 | SI7540ADP-T1-GE3 | VISHAY | VISHAY - SI7540ADP-T1-GE3 - Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 8 A, 8 A, 0.0115 ohm | 170193 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 34 | IPD90N04S403ATMA1 | INFINEON | INFINEON - IPD90N04S403ATMA1 - Power MOSFET, N Channel, 40 V, 90 A, 3200 µohm, TO-252 (DPAK), Surface Mount | 1268 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 35 | STP33N60M2 | STMICROELECTRONICS | STMICROELECTRONICS - STP33N60M2 - Power MOSFET, N Channel, 600 V, 26 A, 0.108 ohm, TO-220AB, Through Hole | 2572 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 36 | IPD30N06S2L13ATMA4 | INFINEON | INFINEON - IPD30N06S2L13ATMA4 - Power MOSFET, N Channel, 55 V, 30 A, 0.013 ohm, TO-252 (DPAK), Surface Mount | 12580 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 37 | STD45N10F7 | STMICROELECTRONICS | STMICROELECTRONICS - STD45N10F7 - Power MOSFET, N Channel, 100 V, 45 A, 0.0145 ohm, TO-252 (DPAK), Surface Mount | 12326 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 38 | IAUC45N04S6N070HATMA1 | INFINEON | INFINEON - IAUC45N04S6N070HATMA1 - Dual MOSFET, N Channel, 40 V, 40 V, 45 A, 45 A, 0.007 ohm | 8633 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 39 | SP8M4HZGTB | ROHM | ROHM - SP8M4HZGTB - Dual MOSFET, N and P Channel, 30 V, 30 V, 9 A, 9 A, 0.018 ohm | 1505 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 40 | IPD90N06S404ATMA2 | INFINEON | INFINEON - IPD90N06S404ATMA2 - Power MOSFET, N Channel, 60 V, 90 A, 3200 µohm, TO-252 (DPAK), Surface Mount | 4778 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 41 | IPB80N04S2H4ATMA2 | INFINEON | INFINEON - IPB80N04S2H4ATMA2 - Power MOSFET, N Channel, 40 V, 80 A, 3200 µohm, TO-263 (D2PAK), Surface Mount | 1505 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 42 | IPB120N10S405ATMA1 | INFINEON | INFINEON - IPB120N10S405ATMA1 - Power MOSFET, N Channel, 100 V, 120 A, 4200 µohm, TO-263 (D2PAK), Surface Mount | 32264 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 43 | PMBS3904,215 | NEXPERIA | NEXPERIA - PMBS3904,215 - Bipolar (BJT) Single Transistor, NPN, 40 V, 100 mA, 250 mW, SOT-23, Surface Mount | 12925 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 44 | HFA3096BZ | RENESAS | RENESAS - HFA3096BZ - Bipolar Transistor Array, Complementary NPN and PNP, 8 V, 8 V, 37 mA, 37 mA, 150 mW | 2291 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 45 | 2SC5658FHAT2L | ROHM | ROHM - 2SC5658FHAT2L - Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 150 mW, SOT-723, Surface Mount | 9752 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 46 | 2SCR572D3FRATL | ROHM | ROHM - 2SCR572D3FRATL - Bipolar (BJT) Single Transistor, NPN, 30 V, 5 A, 10 W, TO-252 (DPAK), Surface Mount | 1519 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 47 | SMMUN2216LT1G | ONSEMI | ONSEMI - SMMUN2216LT1G - Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm | 2912 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 48 | 2SAR573D3FRATL | ROHM | ROHM - 2SAR573D3FRATL - Bipolar (BJT) Single Transistor, PNP, 50 V, 3 A, 10 W, TO-252 (DPAK), Surface Mount | 2265 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 49 | BDW94C | MULTICOMP PRO | MULTICOMP PRO - BDW94C - Darlington Transistor, Darlington, PNP, 100 V, 80 W, 12 A, TO-220, 3 Pins | 2209 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 50 | BDX33C | MULTICOMP PRO | MULTICOMP PRO - BDX33C - Darlington Transistor, Darlington, NPN, 100 V, 70 W, 10 A, TO-220, 3 Pins | 4013 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 51 | STGB20N45LZAG | STMICROELECTRONICS | STMICROELECTRONICS - STGB20N45LZAG - IGBT, 25 A, 1.1 V, 150 W, 450 V, TO-263 (D2PAK), 3 Pins | 1886 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 52 | IKD15N60RFATMA1 | INFINEON | INFINEON - IKD15N60RFATMA1 - IGBT, 30 A, 2.2 V, 250 W, 600 V, TO-252 (DPAK), 3 Pins | 14313 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 53 | CNY75A | VISHAY | VISHAY - CNY75A - Optocoupler, Transistor Output, 1 Channel, DIP, 6 Pins, 60 mA, 5 kV, 63 % | 7257 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 54 | TCMT4600 | VISHAY | VISHAY - TCMT4600 - Optocoupler, Transistor Output, 4 Channel, SOP, 16 Pins, 60 mA, 3.75 kV, 80 % | 9171 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 55 | VS-FC420SA15 | VISHAY | VISHAY - VS-FC420SA15 - MOSFET Transistor, N Channel, 400 A, 150 V, 0.00193 ohm, 10 V, 3.46 V, SOT-227 | 520 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 56 | TIP36C | MULTICOMP PRO | MULTICOMP PRO - TIP36C - Bipolar (BJT) Single Transistor, General Purpose, PNP, 100 V, 25 A, 125 W, TO-247, Through Hole | 5024 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 57 | MP001170 | MULTICOMP PRO | MULTICOMP PRO - MP001170 - Bipolar (BJT) Single Transistor, NPN, 350 V, 1 A, 5 W, TO-39, Through Hole | 5003 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 58 | PXTA42F | NEXPERIA | NEXPERIA - PXTA42F - Bipolar (BJT) Single Transistor, NPN, 300 V, 100 mA, 1.3 W, SC-62, Surface Mount | 2040 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 59 | SFH6286-3 | VISHAY | VISHAY - SFH6286-3 - Optocoupler, Transistor Output, 1 Channel, Surface Mount DIP, 4 Pins, 50 mA, 5.3 kV, 100 % | 35393 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 60 | 2N7002W-7-F | DIODES INC. | DIODES INC. - 2N7002W-7-F - Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-323, Surface Mount | 940813 *LT 7-14 W Days.. |
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Min.: 500 Mult.: 5 |
| 61 | IRFR9310PBF | VISHAY | VISHAY - IRFR9310PBF - Power MOSFET, P Channel, 400 V, 1.8 A, 7 ohm, TO-252 (DPAK), Surface Mount | 16164 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 62 | FDMS3660S | ONSEMI | ONSEMI - FDMS3660S - Dual MOSFET, N Channel, 30 V, 30 V, 60 A, 60 A, 1300 µohm | 8449 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 63 | SIA437DJ-T1-GE3 | VISHAY | VISHAY - SIA437DJ-T1-GE3 - Power MOSFET, P Channel, 20 V, 29.7 A, 0.0145 ohm, PowerPAK SC-70, Surface Mount | 119845 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 64 | STD12NF06T4 | STMICROELECTRONICS | STMICROELECTRONICS - STD12NF06T4 - Power MOSFET, N Channel, 60 V, 12 A, 0.1 ohm, TO-252 (DPAK), Surface Mount | 5721 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 65 | BSS315PH6327XTSA1 | INFINEON | INFINEON - BSS315PH6327XTSA1 - Power MOSFET, P Channel, 30 V, 1.5 A, 0.113 ohm, SOT-23, Surface Mount | 33380 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 66 | DMN65D8L-7 | DIODES INC. | DIODES INC. - DMN65D8L-7 - Power MOSFET, N Channel, 60 V, 310 mA, 3 ohm, SOT-23, Surface Mount | 227783 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 67 | FDC6310P | ONSEMI | ONSEMI - FDC6310P - Dual MOSFET, P Channel, 20 V, 20 V, 2.2 A, 2.2 A, 0.1 ohm | 6498 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 68 | NTUD3169CZT5G | ONSEMI | ONSEMI - NTUD3169CZT5G - Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 220 mA, 220 mA, 0.75 ohm | 18480 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 69 | BSC011N03LSTATMA1 | INFINEON | INFINEON - BSC011N03LSTATMA1 - Power MOSFET, N Channel, 30 V, 100 A, 900 µohm, TDSON, Surface Mount | 4857 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 70 | SI7850ADP-T1-GE3 | VISHAY | VISHAY - SI7850ADP-T1-GE3 - Power MOSFET, N Channel, 60 V, 12 A, 0.0195 ohm, PowerPAK SO, Surface Mount | 29678 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 71 | STP4N80K5 | STMICROELECTRONICS | STMICROELECTRONICS - STP4N80K5 - Power MOSFET, N Channel, 800 V, 3 A, 2.1 ohm, TO-220AB, Through Hole | 2740 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 72 | IPP60R170CFD7XKSA1 | INFINEON | INFINEON - IPP60R170CFD7XKSA1 - Power MOSFET, N Channel, 600 V, 14 A, 0.17 ohm, TO-220, Through Hole | 2397 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 73 | BUK7Y1R7-40HX | NEXPERIA | NEXPERIA - BUK7Y1R7-40HX - Power MOSFET, N Channel, 40 V, 120 A, 1350 µohm, SOT-669, Surface Mount | 1941 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 74 | STH12N120K5-2 | STMICROELECTRONICS | STMICROELECTRONICS - STH12N120K5-2 - Power MOSFET, N Channel, 1.2 kV, 12 A, 0.62 ohm, H2PAK-2, Surface Mount | 1033 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 75 | BUK7Y2R5-40HX | NEXPERIA | NEXPERIA - BUK7Y2R5-40HX - Power MOSFET, N Channel, 40 V, 120 A, 2130 µohm, SOT-669, Surface Mount | 3767 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 76 | STF12N50M2 | STMICROELECTRONICS | STMICROELECTRONICS - STF12N50M2 - Power MOSFET, N Channel, 500 V, 10 A, 0.325 ohm, TO-220FP, Through Hole | 1012 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 77 | DMTH3002LPS-13 | DIODES INC. | DIODES INC. - DMTH3002LPS-13 - Power MOSFET, N Channel, 30 V, 100 A, 1250 µohm, PowerDI 5060, Surface Mount | 2530 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 78 | RAL035P01TCR | ROHM | ROHM - RAL035P01TCR - Power MOSFET, P Channel, 12 V, 3.5 A, 0.042 ohm, TUMT, Surface Mount | 532 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 79 | DMT4002LPS-13 | DIODES INC. | DIODES INC. - DMT4002LPS-13 - Power MOSFET, N Channel, 40 V, 100 A, 1300 µohm, PowerDI 5060, Surface Mount | 2140 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 80 | NVTFS4C05NTAG | ONSEMI | ONSEMI - NVTFS4C05NTAG - Power MOSFET, N Channel, 30 V, 102 A, 3600 µohm, WDFN, Surface Mount | 90 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 81 | STWA45N65M5 | STMICROELECTRONICS | STMICROELECTRONICS - STWA45N65M5 - Power MOSFET, N Channel, 650 V, 35 A, 0.067 ohm, TO-247, Through Hole | 321 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 82 | STF12N120K5 | STMICROELECTRONICS | STMICROELECTRONICS - STF12N120K5 - Power MOSFET, N Channel, 1.2 kV, 12 A, 0.62 ohm, TO-220FP, Through Hole | 2845 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 83 | R6076KNZ4C13 | ROHM | ROHM - R6076KNZ4C13 - Power MOSFET, N Channel, 600 V, 76 A, 0.042 ohm, TO-247, Through Hole | 10 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 84 | G3R40MT12J | GENESIC | GENESIC - G3R40MT12J - Silicon Carbide MOSFET, Single, N Channel, 75 A, 1.2 kV, 0.04 ohm, TO-263 (D2PAK) | 2 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 85 | IAUC120N04S6N009ATMA1 | INFINEON | INFINEON - IAUC120N04S6N009ATMA1 - Power MOSFET, N Channel, 40 V, 120 A, 750 µohm, TDSON, Surface Mount | 26365 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 86 | SIHB120N60E-T5-GE3 | VISHAY | VISHAY - SIHB120N60E-T5-GE3 - Power MOSFET, N Channel, 600 V, 25 A, 0.12 ohm, TO-263 (D2PAK), Surface Mount | 1527 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 87 | STB25N80K5 | STMICROELECTRONICS | STMICROELECTRONICS - STB25N80K5 - Power MOSFET, N Channel, 800 V, 19.5 A, 0.19 ohm, TO-263 (D2PAK), Surface Mount | 899 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 88 | IPD60R210PFD7SAUMA1 | INFINEON | INFINEON - IPD60R210PFD7SAUMA1 - Power MOSFET, N Channel, 600 V, 16 A, 0.171 ohm, TO-252 (DPAK), Surface Mount | 2262 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 89 | AUIRFP4110 | INFINEON | INFINEON - AUIRFP4110 - Power MOSFET, N Channel, 100 V, 120 A, 3700 µohm, TO-247AC, Through Hole | 2173 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 90 | IKW40N65H5FKSA1 | INFINEON | INFINEON - IKW40N65H5FKSA1 - IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-247, 3 Pins | 17023 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 91 | STGW80H65DFB | STMICROELECTRONICS | STMICROELECTRONICS - STGW80H65DFB - IGBT, 120 A, 1.6 V, 469 W, 650 V, TO-247, 3 Pins | 2018 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 92 | DTC013ZEBTL | ROHM | ROHM - DTC013ZEBTL - Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 1 kohm, 10 kohm | 4164 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 93 | MMUN2131LT1G | ONSEMI | ONSEMI - MMUN2131LT1G - Bipolar Pre-Biased / Digital Transistor, Single PNP, 50 V, 100 mA, 2.2 kohm, 2.2 kohm | 6441 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 94 | DTC123ECAT116 | ROHM | ROHM - DTC123ECAT116 - Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm | 2620 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 95 | DTC113ZMT2L | ROHM | ROHM - DTC113ZMT2L - Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 1 kohm, 10 kohm | 3810 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 96 | AC848BQ-13 | DIODES INC. | DIODES INC. - AC848BQ-13 - Bipolar (BJT) Single Transistor, NPN, 30 V, 100 mA, 350 mW, SOT-23, Surface Mount | 9645 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 97 | BC857AQCZ | NEXPERIA | NEXPERIA - BC857AQCZ - Bipolar (BJT) Single Transistor, PNP, 45 V, 100 mA, 450 mW, DFN1412D, Surface Mount | 5000 *LT 7-14 W Days.. |
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Min.: 500 Mult.: 5 |
| 98 | PBLS6003D-QX | NEXPERIA | NEXPERIA - PBLS6003D-QX - Bipolar Transistor Array, NPN, PNP, 50 V, 50 V, 100 mA, 1 A, 600 mW | 2160 *LT 7-14 W Days.. |
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Min.: 100 Mult.: 5 |
| 99 | BC857AQCZ | NEXPERIA | NEXPERIA - BC857AQCZ - Bipolar (BJT) Single Transistor, PNP, 45 V, 100 mA, 450 mW, DFN1412D, Surface Mount | 5000 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 100 | PBLS6003D-QX | NEXPERIA | NEXPERIA - PBLS6003D-QX - Bipolar Transistor Array, NPN, PNP, 50 V, 50 V, 100 mA, 1 A, 600 mW | 2160 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 101 | BC847BPN,115 | NEXPERIA | Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A | 52328 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 102 | TIP122 | STMicroelectronics | Transistor: NPN; bipolar; Darlington; 100V; 5A; 65W; TO220AB | 5126 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 103 | 2N7002 | DIOTEC SEMICONDUCTOR | Transistor: N-MOSFET; unipolar; 60V; 0.28A; Idm: 1.2A; 0.35W; SOT23 | 131220 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 104 | BC847B | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23 | 733279 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 105 | MMFTP3401 | DIOTEC SEMICONDUCTOR | Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -27A; 1.4W; SOT23 | 85863 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 106 | AO4629 | ALPHA & OMEGA SEMICONDUCTOR | Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V | 21778 *LT 7-14 W Days.. |
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Min.: 3 Mult.: 1 |
| 107 | IRF7342TRPBF | INFINEON TECHNOLOGIES | Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8 | 5494 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 108 | 2N7002BKS,115 | NEXPERIA | Transistor: N-MOSFET x2; Trench; unipolar; 60V; 0.215A; Idm: 1.2A | 12396 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 109 | BC817-25 | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.8A; 310mW; SOT23 | 524306 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 110 | BDX53C | STMicroelectronics | Transistor: NPN; bipolar; Darlington; 100V; 8A; 60W; TO220AB | 1695 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 111 | IKW40N120H3FKSA1 | INFINEON TECHNOLOGIES | Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3 | 240 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 112 | FGH60N60SMD | ONSEMI | Transistor: IGBT; 600V; 60A; 300W; TO247-3 | 238 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 113 | BDX54C | STMicroelectronics | Transistor: PNP; bipolar; Darlington; 100V; 8A; 60W; TO220AB | 3094 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 114 | IRF4905PBF | INFINEON TECHNOLOGIES | Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB | 1175 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 115 | BDW93C | STMicroelectronics | Transistor: NPN; bipolar; Darlington; 100V; 12A; 80W; TO220AB | 1508 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 116 | TBC517 | CDIL | Transistor: NPN; bipolar; Darlington; 30V; 1A; 0.625W; TO92 | 6740 *LT 7-14 W Days.. |
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Min.: 10 Mult.: 5 |
| 117 | BD681 | STMicroelectronics | Transistor: NPN; bipolar; Darlington; 100V; 4A; 40W; SOT32 | 4864 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 118 | STGW20NC60VD | STMicroelectronics | Transistor: IGBT; 600V; 30A; 200W; TO247-3 | 1166 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 119 | BSS138-TP | MICRO COMMERCIAL COMPONENTS | Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.35W; SOT23 | 145839 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 120 | IRF9540NPBF | INFINEON TECHNOLOGIES | Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB | 781 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 121 | SIHFR9220TR-GE3 | Vishay Semiconductors | MOSFETs MOSFET P-CHANNEL 200V | 1920 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 122 | SIHFBC30AL-GE3 | Vishay Semiconductors | MOSFETs MOSFET N-CHANNEL 600V | 995 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 123 | SIHFR9024-GE3 | Vishay Semiconductors | MOSFETs MOSFET P-CHANNEL 60V | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 124 | TLP620M(D4GRT5,E | Toshiba | Transistor Output Optocouplers AC input transistor optocoupler; DIP4; RoHS; T&R, VDE | 1013 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 125 | SIHFU220-GE3 | Vishay Semiconductors | MOSFETs MOSFET N-CHANNEL 200V | 2841 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 126 | IQE036N08NM6SCATMA1 | Infineon Technologies | MOSFETs OptiMOS 6 n-channel power MOSFET 80 V | 630 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 127 | SISS4304DN-T1-UE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 30-V (D-S) MOSFET | 2886 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 128 | SI2399BDS-T1-GE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 20-V (D-S) MOSFET | 2582 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 129 | SI3425DV-T1-GE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 20-V (D-S) MOSFET | 2940 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 130 | SIHF620S-GE3 | Vishay Semiconductors | MOSFETs MOSFET N-CHANNEL 200V | 881 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 131 | SI1425DH-T1-GE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 20-V (D-S) MOSFET | 2946 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 132 | SIRA14DDP-T1-UE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 30-V (D-S) MOSFET | 2410 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 133 | SIHG050N65SF-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 650V | 425 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 134 | SIHB240N65E-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 650V | 950 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 135 | SIRA12DDP-T1-UE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 30-V (D-S) MOSFET | 2698 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 136 | SIB5215DK-T1-GE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 20-V (D-S) MOSFET | 2950 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 137 | SI2319DDS-T1-BE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 40-V (D-S) MOSFET | 2314 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 138 | SI2393DS-T1-BE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 30-V (D-S) MOSFET | 2518 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 139 | SIHG100N65E-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 650V | 450 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 140 | SI2392BDS-T1-BE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 100-V (D-S) MOSFET | 2867 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 141 | SIHF520S-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 100V | 807 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 142 | SIHFR9024TRL-GE3 | Vishay Semiconductors | MOSFETs MOSFET P-CHANNEL 60V | 2993 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 143 | DMN3059LCA3-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V X4-DSN1006-3 T&R 10K | 6930 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 144 | SIRA18DDP-T1-UE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 30-V (D-S) MOSFET | 2965 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 145 | SIRA10DDP-T1-UE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 30-V (D-S) MOSFET | 2990 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 146 | SI2318HDS-T1-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 40-V (D-S) MOSFET | 7766 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 147 | SGT350R70GTK | STMicroelectronics | GaN FETs 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor | Contact Us |
Min.: 1 Mult.: 1 |
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| 148 | SIHFU420-GE3 | Vishay Semiconductors | MOSFETs MOSFET N-CHANNEL 500V | 2971 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 149 | SI2301HDS-T1-GE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 20-V (D-S) MOSFET | 2680 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 150 | DMT3009LSSQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SO-8 T&R 2.5K | 1980 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 151 | DMP21D1UFB4Q-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K | 6559 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 152 | AIGBG15N120S7ATMA1 | Infineon Technologies | IGBTs Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology | 399 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 153 | NSVMUN5216T1G | onsemi | Digital Transistors SS SC70 BR XSTR NPN 50V | 14980 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 154 | IAUMN04S7N005GAUMA1 | Infineon Technologies | MOSFETs 250 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology | 2698 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 155 | SCT019HU120G3AG | STMicroelectronics | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A | Contact Us |
Min.: 1 Mult.: 1 |
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| 156 | SQJ461EP-T1_NE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET | 2000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 157 | IGT65R025D2ATMA1 | Infineon Technologies | GaN FETs CoolGaN Transistor 650 V G5 | 3093 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 158 | IMDQ75R004M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC MOSFET 750 V G2 | 102 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 159 | AFGB30T65RQDN | onsemi | IGBTs 650V/30A FS4 SCR IGBT D2PAK AUTOMOTIVE | 553 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 160 | NSVMMUN2138LT1G | onsemi | Digital Transistors PNP DIGITAL TRANSISTOR (BRT) | Contact Us |
Min.: 1 Mult.: 1 |
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| 161 | NSVMUN5134T1G | onsemi | Digital Transistors SS SC70 BR XSTR PNP 50V | Contact Us |
Min.: 1 Mult.: 1 |
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| 162 | NSVMUN2132T1G | onsemi | Digital Transistors SS SC59 BR XSTR PNP 50V | 14840 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 163 | ULN2003AT16-13 | Diodes Incorporated | Darlington Transistors Std Lin Interface TSSOP-16 T&R 2.5K | 2206 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 164 | NSVBC115EPDXV6T1G | onsemi | Digital Transistors SS SOT563 RSTR XSTR TR | Contact Us |
Min.: 1 Mult.: 1 |
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| 165 | ISC040N10NM7ATMA1 | Infineon Technologies | MOSFETs OptiMOS 7 PowerTransistor, 100 V | 827 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 166 | IAUMN04S7N006GAUMA1 | Infineon Technologies | MOSFETs 200 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology | 170 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 167 | SQA403CEJW-T1_GE3 | Vishay | MOSFETs P-CHANNEL 30-V (D-S) 175C MOSFET | Contact Us |
Min.: 1 Mult.: 1 |
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| 168 | ISC034N08NM7ATMA1 | Infineon Technologies | MOSFETs OptiMOS 7 PowerTransistor, 80 V | 183 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 169 | ISC024N08NM7ATMA1 | Infineon Technologies | MOSFETs OptiMOS 7 PowerTransistor, 80 V | 672 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 170 | XSM6K519NW,LXHF | Toshiba | MOSFETs N-ch MOSFET, 40 V, 8.0 A, 0.0118 ohm at 10V, DFN2020B(WF) | 2100 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
