170 Products
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| SN: | Part No. | Manufacturer | Description | Stock | Pricing (Sort by price) | Buy |
| 1 | MPSA42 | ONSEMI | ONSEMI - MPSA42 - Bipolar (BJT) Single Transistor, NPN, 300 V, 500 mA, 625 mW, TO-92, Through Hole | 352690 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 2 | 2SA1943OTU | ONSEMI | ONSEMI - 2SA1943OTU - Bipolar (BJT) Single Transistor, PNP, 250 V, 17 A, 150 W, TO-264, Through Hole | 12956 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 3 | NJW3281G | ONSEMI | ONSEMI - NJW3281G - Bipolar (BJT) Single Transistor, NPN, 250 V, 15 A, 200 W, TO-3P, Through Hole | 2995 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 4 | 2N3904TFR | ONSEMI | ONSEMI - 2N3904TFR - Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 625 mW, TO-92, Through Hole | 12231 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 5 | HCPL-0501-000E | BROADCOM | BROADCOM - HCPL-0501-000E - Optocoupler, Transistor Output, 1 Channel, SOIC, 8 Pins, 25 mA, 3.75 kV, 19 % | 22979 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 6 | SD2941-10W | STMICROELECTRONICS | STMICROELECTRONICS - SD2941-10W - RF FET Transistor, 130 V, 20 A, 389 W, 175 MHz, M174 | 447 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 7 | NDT456P | ONSEMI | ONSEMI - NDT456P - Power MOSFET, P Channel, 30 V, 7.3 A, 0.03 ohm, SOT-223, Surface Mount | 39763 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 8 | SPD08P06PGBTMA1 | INFINEON | INFINEON - SPD08P06PGBTMA1 - Power MOSFET, P Channel, 60 V, 8.83 A, 0.3 ohm, TO-252 (DPAK), Surface Mount | 42840 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 9 | SIS890DN-T1-GE3 | VISHAY | VISHAY - SIS890DN-T1-GE3 - Power MOSFET, N Channel, 100 V, 30 A, 0.0235 ohm, PowerPAK 1212, Surface Mount | 14367 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 10 | BSS138-7-F | DIODES INC. | DIODES INC. - BSS138-7-F - Power MOSFET, N Channel, 50 V, 200 mA, 3.5 ohm, SOT-23, Surface Mount | 452759 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 11 | BSC123N08NS3GATMA1 | INFINEON | INFINEON - BSC123N08NS3GATMA1 - Power MOSFET, N Channel, 80 V, 55 A, 0.0123 ohm, PG-TDSON, Surface Mount | 76874 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 12 | FQP27P06 | ONSEMI | ONSEMI - FQP27P06 - Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-220, Through Hole | 18466 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 13 | IRF7343TRPBF | INFINEON | INFINEON - IRF7343TRPBF - Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm | 82563 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 14 | SUM110P08-11L-E3 | VISHAY | VISHAY - SUM110P08-11L-E3 - Power MOSFET, P Channel, 80 V, 110 A, 0.0112 ohm, TO-263 (D2PAK), Surface Mount | 17566 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 15 | IRF5210STRLPBF | INFINEON | INFINEON - IRF5210STRLPBF - Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount | 23721 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 16 | BSS84 | ONSEMI | ONSEMI - BSS84 - Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount | 300000 *LT 7-14 W Days.. |
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Min.: 3000 Mult.: 3000 |
| 17 | IRFZ34NPBF | INFINEON | INFINEON - IRFZ34NPBF - Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole | 52092 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 18 | IRF4905PBF | INFINEON | INFINEON - IRF4905PBF - Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole | 68674 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 19 | IRF520NPBF | INFINEON | INFINEON - IRF520NPBF - Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole | 99704 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 20 | ZXMS6004FFTA | DIODES INC. | DIODES INC. - ZXMS6004FFTA - Power MOSFET, N Channel, 60 V, 2 A, 0.5 ohm, SOT-23F, Surface Mount | 178328 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 21 | FDD86252 | ONSEMI | ONSEMI - FDD86252 - Power MOSFET, N Channel, 150 V, 27 A, 0.052 ohm, TO-252 (DPAK), Surface Mount | 94840 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 22 | FDMS86101 | ONSEMI | ONSEMI - FDMS86101 - Power MOSFET, N Channel, 100 V, 60 A, 8000 µohm, Power 56, Surface Mount | 16821 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 23 | BSC340N08NS3GATMA1 | INFINEON | INFINEON - BSC340N08NS3GATMA1 - Power MOSFET, N Channel, 80 V, 23 A, 0.034 ohm, SuperSOT, Surface Mount | 963988 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 24 | IRFR5305TRPBF | INFINEON | INFINEON - IRFR5305TRPBF - Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount | 61252 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 25 | IRF540NPBF | INFINEON | INFINEON - IRF540NPBF - Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-220AB, Through Hole | 70306 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 26 | BSC067N06LS3GATMA1 | INFINEON | INFINEON - BSC067N06LS3GATMA1 - Power MOSFET, N Channel, 60 V, 50 A, 6700 µohm, SuperSOT, Surface Mount | 22296 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 27 | STN3NF06L | STMICROELECTRONICS | STMICROELECTRONICS - STN3NF06L - Power MOSFET, N Channel, 60 V, 4 A, 0.1 ohm, SOT-223, Surface Mount | 55879 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 28 | DMG2305UX-7 | DIODES INC. | DIODES INC. - DMG2305UX-7 - Power MOSFET, P Channel, 20 V, 4.2 A, 0.052 ohm, SOT-23, Surface Mount | 300016 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 29 | BSC060N10NS3GATMA1 | INFINEON | INFINEON - BSC060N10NS3GATMA1 - Power MOSFET, N Channel, 100 V, 90 A, 6000 µohm, TDSON, Surface Mount | 23323 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 30 | BSS308PEH6327XTSA1 | INFINEON | INFINEON - BSS308PEH6327XTSA1 - Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount | 165739 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 31 | IRFP250MPBF | INFINEON | INFINEON - IRFP250MPBF - Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole | 8234 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 32 | SIR626DP-T1-RE3 | VISHAY | VISHAY - SIR626DP-T1-RE3 - Power MOSFET, N Channel, 60 V, 100 A, 1700 µohm, PowerPAK SO, Surface Mount | 18368 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 33 | IPB120N04S402ATMA1 | INFINEON | INFINEON - IPB120N04S402ATMA1 - Power MOSFET, N Channel, 40 V, 120 A, 1880 µohm, TO-263 (D2PAK), Surface Mount | 4363 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 34 | SQJ469EP-T1_GE3 | VISHAY | VISHAY - SQJ469EP-T1_GE3 - Power MOSFET, P Channel, 80 V, 32 A, 0.025 ohm, PowerPAK SO, Surface Mount | 24416 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 35 | FDH055N15A | ONSEMI | ONSEMI - FDH055N15A - Power MOSFET, N Channel, 150 V, 156 A, 4800 µohm, TO-247, Through Hole | 4110 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 36 | SIDR870ADP-T1-GE3 | VISHAY | VISHAY - SIDR870ADP-T1-GE3 - Power MOSFET, N Channel, 100 V, 95 A, 6600 µohm, PowerPAK SO, Surface Mount | 32649 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 37 | NVBG020N090SC1 | ONSEMI | ONSEMI - NVBG020N090SC1 - Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK) | 440 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 38 | SIZ980BDT-T1-GE3 | VISHAY | VISHAY - SIZ980BDT-T1-GE3 - Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm | 11794 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 39 | IKW40N120H3FKSA1 | INFINEON | INFINEON - IKW40N120H3FKSA1 - IGBT, 40 A, 2.4 V, 483 W, 1.2 kV, TO-247, 3 Pins | 13389 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 40 | STGD8NC60KDT4 | STMICROELECTRONICS | STMICROELECTRONICS - STGD8NC60KDT4 - IGBT, 15 A, 2.2 V, 62 W, 600 V, TO-252 (DPAK), 3 Pins | 2297 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 41 | PS2811-4-F3-A | RENESAS | RENESAS - PS2811-4-F3-A - Optocoupler, 4 Channel, SSOP, 16 Pins, 50 mA, 2.5 kV, 100 % | 18711 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 42 | PS2501L-1-F3-A | RENESAS | RENESAS - PS2501L-1-F3-A - Optocoupler, 1 Channel, Surface Mount DIP, 4 Pins, 80 mA, 5 kV, 80 % | 54435 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 43 | TLP785F(D4GLT7,F(C | TOSHIBA | TOSHIBA - TLP785F(D4GLT7,F(C - Optocoupler, 1 Channel, SMD, 4 Pins, 60 mA, 5 kV, 50 % | 15940 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 44 | BC847BPDW1T1G | ONSEMI | ONSEMI - BC847BPDW1T1G - Bipolar - RF Transistor, NPN, PNP, 45 V, 100 MHz, 380 mW, 100 mA, SOT-363 | 57368 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 45 | MMBT4403LT3G | ONSEMI | ONSEMI - MMBT4403LT3G - Bipolar (BJT) Single Transistor, PNP, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount | 93550 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 46 | SMMUN2114LT1G | ONSEMI | ONSEMI - SMMUN2114LT1G - Bipolar Pre-Biased / Digital Transistor, Single PNP, 50 V, 100 mA, 10 kohm, 47 kohm | 5634 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 47 | STR1550 | STMICROELECTRONICS | STMICROELECTRONICS - STR1550 - Bipolar (BJT) Single Transistor, NPN, 500 V, 500 mA, 500 mW, SOT-23, Surface Mount | 55156 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 48 | BULD118D-1 | STMICROELECTRONICS | STMICROELECTRONICS - BULD118D-1 - Bipolar (BJT) Single Transistor, NPN, 400 V, 2 A, 20 W, TO-251, Through Hole | 18908 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 49 | MMBFJ108 | ONSEMI | ONSEMI - MMBFJ108 - JFET Transistor, JFET, -25 V, 80 mA, -10 V, SOT-23, 3 Pin, 150 °C | 188847 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 50 | SI2323CDS-T1-GE3 | VISHAY | VISHAY - SI2323CDS-T1-GE3 - Power MOSFET, P Channel, 20 V, 6 A, 0.039 ohm, SOT-23, Surface Mount | 34607 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 51 | IPB320N20N3GATMA1 | INFINEON | INFINEON - IPB320N20N3GATMA1 - Power MOSFET, N Channel, 200 V, 34 A, 0.032 ohm, TO-263 (D2PAK), Surface Mount | 15395 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 52 | STD3NK80ZT4 | STMICROELECTRONICS | STMICROELECTRONICS - STD3NK80ZT4 - Power MOSFET, N Channel, 800 V, 2.5 A, 4.5 ohm, TO-252 (DPAK), Surface Mount | 8970 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 53 | STD20NF06LT4 | STMICROELECTRONICS | STMICROELECTRONICS - STD20NF06LT4 - Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount | 80795 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 54 | STD3NK80Z-1 | STMICROELECTRONICS | STMICROELECTRONICS - STD3NK80Z-1 - Power MOSFET, N Channel, 800 V, 1.25 A, 3.8 ohm, TO-251AA, Through Hole | 2695 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 55 | SI4056DY-T1-GE3 | VISHAY | VISHAY - SI4056DY-T1-GE3 - Power MOSFET, N Channel, 100 V, 11.1 A, 0.023 ohm, SOIC, Surface Mount | 43543 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 56 | SIS892ADN-T1-GE3 | VISHAY | VISHAY - SIS892ADN-T1-GE3 - Power MOSFET, N Channel, 100 V, 28 A, 0.033 ohm, PowerPAK 1212, Surface Mount | 25254 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 57 | BSC059N04LSGATMA1 | INFINEON | INFINEON - BSC059N04LSGATMA1 - Power MOSFET, N Channel, 40 V, 73 A, 5900 µohm, PG-TDSON, Surface Mount | 84228 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 58 | SI4840BDY-T1-GE3 | VISHAY | VISHAY - SI4840BDY-T1-GE3 - Power MOSFET, N Channel, 40 V, 19 A, 9000 µohm, NSOIC, Surface Mount | 13115 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 59 | SI4532CDY-T1-GE3 | VISHAY | VISHAY - SI4532CDY-T1-GE3 - Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6 A, 6 A, 0.038 ohm | 42717 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 60 | BSZ042N06NSATMA1 | INFINEON | INFINEON - BSZ042N06NSATMA1 - Power MOSFET, N Channel, 60 V, 40 A, 4200 µohm, TSDSON, Surface Mount | 133952 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 61 | STL15DN4F5 | STMICROELECTRONICS | STMICROELECTRONICS - STL15DN4F5 - Dual MOSFET, N Channel, 40 V, 40 V, 15 A, 15 A, 8000 µohm | 2864 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 62 | IPD90N03S4L02ATMA1 | INFINEON | INFINEON - IPD90N03S4L02ATMA1 - Power MOSFET, N Channel, 30 V, 90 A, 2200 µohm, TO-252 (DPAK), Surface Mount | 18740 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 63 | BSC060N10NS3GATMA1 | INFINEON | INFINEON - BSC060N10NS3GATMA1 - Power MOSFET, N Channel, 100 V, 90 A, 6000 µohm, TDSON, Surface Mount | 23323 *LT 7-14 W Days.. |
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Min.: 100 Mult.: 5 |
| 64 | SI7155DP-T1-GE3 | VISHAY | VISHAY - SI7155DP-T1-GE3 - Power MOSFET, P Channel, 40 V, 100 A, 3600 µohm, PowerPAK SO, Surface Mount | 32516 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 65 | STP57N65M5 | STMICROELECTRONICS | STMICROELECTRONICS - STP57N65M5 - Power MOSFET, N Channel, 650 V, 42 A, 0.056 ohm, TO-220AB, Through Hole | 2028 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 66 | RQ5L015SPTL | ROHM | ROHM - RQ5L015SPTL - Power MOSFET, P Channel, 60 V, 1.5 A, 0.28 ohm, TSMT, Surface Mount | 13307 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 67 | SI7540ADP-T1-GE3 | VISHAY | VISHAY - SI7540ADP-T1-GE3 - Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 8 A, 8 A, 0.0115 ohm | 170307 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 68 | IPB017N10N5LFATMA1 | INFINEON | INFINEON - IPB017N10N5LFATMA1 - Power MOSFET, N Channel, 100 V, 180 A, 1700 µohm, TO-263 (D2PAK), Surface Mount | 5623 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 69 | BSC034N06NSATMA1 | INFINEON | INFINEON - BSC034N06NSATMA1 - Power MOSFET, N Channel, 60 V, 100 A, 2800 µohm, TDSON, Surface Mount | 17332 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 70 | IRF7820TRPBF | INFINEON | INFINEON - IRF7820TRPBF - Power MOSFET, N Channel, 200 V, 3.7 A, 0.078 ohm, SOIC, Surface Mount | 42802 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 71 | NVHL080N120SC1 | ONSEMI | ONSEMI - NVHL080N120SC1 - Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 44 A, 1.2 kV, 0.08 ohm, TO-247 | 2049 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 72 | FDD86250-F085 | ONSEMI | ONSEMI - FDD86250-F085 - Power MOSFET, N Channel, 150 V, 50 A, 0.0194 ohm, TO-252 (DPAK), Surface Mount | 10308 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 73 | FCH067N65S3-F155 | ONSEMI | ONSEMI - FCH067N65S3-F155 - Power MOSFET, N Channel, 650 V, 44 A, 0.067 ohm, TO-247, Through Hole | 957 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 74 | STF6N95K5 | STMICROELECTRONICS | STMICROELECTRONICS - STF6N95K5 - Power MOSFET, N Channel, 950 V, 9 A, 1 ohm, TO-220FP, Through Hole | 1507 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 75 | SISS46DN-T1-GE3 | VISHAY | VISHAY - SISS46DN-T1-GE3 - Power MOSFET, N Channel, 100 V, 45.3 A, 0.0128 ohm, PowerPAK 1212, Surface Mount | 14061 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 76 | SIHG11N80AE-GE3 | VISHAY | VISHAY - SIHG11N80AE-GE3 - Power MOSFET, N Channel, 800 V, 8 A, 0.45 ohm, TO-247AC, Through Hole | 517 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 77 | STB20N95K5 | STMICROELECTRONICS | STMICROELECTRONICS - STB20N95K5 - Power MOSFET, N Channel, 950 V, 17.5 A, 0.33 ohm, TO-263 (D2PAK), Surface Mount | 3271 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 78 | STD3N80K5 | STMICROELECTRONICS | STMICROELECTRONICS - STD3N80K5 - Power MOSFET, N Channel, 800 V, 2.5 A, 2.8 ohm, TO-252 (DPAK), Surface Mount | 6828 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 79 | IAUC45N04S6N070HATMA1 | INFINEON | INFINEON - IAUC45N04S6N070HATMA1 - Dual MOSFET, N Channel, 40 V, 40 V, 45 A, 45 A, 0.007 ohm | 8898 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 80 | SP8M4HZGTB | ROHM | ROHM - SP8M4HZGTB - Dual MOSFET, N and P Channel, 30 V, 30 V, 9 A, 9 A, 0.018 ohm | 1565 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 81 | IPB80N04S2H4ATMA2 | INFINEON | INFINEON - IPB80N04S2H4ATMA2 - Power MOSFET, N Channel, 40 V, 80 A, 3200 µohm, TO-263 (D2PAK), Surface Mount | 1519 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 82 | IPB120N10S405ATMA1 | INFINEON | INFINEON - IPB120N10S405ATMA1 - Power MOSFET, N Channel, 100 V, 120 A, 4200 µohm, TO-263 (D2PAK), Surface Mount | 32285 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 83 | SI4464DY-T1-GE3 | VISHAY | VISHAY - SI4464DY-T1-GE3 - Power MOSFET, N Channel, 200 V, 1.7 A, 0.24 ohm, SOIC, Surface Mount | 4489 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 84 | STGB20N45LZAG | STMICROELECTRONICS | STMICROELECTRONICS - STGB20N45LZAG - IGBT, 25 A, 1.1 V, 150 W, 450 V, TO-263 (D2PAK), 3 Pins | 1891 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 85 | STGW30H60DFB | STMICROELECTRONICS | STMICROELECTRONICS - STGW30H60DFB - IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-247, 3 Pins | 4190 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 86 | IKD15N60RFATMA1 | INFINEON | INFINEON - IKD15N60RFATMA1 - IGBT, 30 A, 2.2 V, 250 W, 600 V, TO-252 (DPAK), 3 Pins | 15323 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 87 | KSP44BU | ONSEMI | ONSEMI - KSP44BU - Bipolar (BJT) Single Transistor, NPN, 400 V, 300 mA, 625 mW, TO-92, Through Hole | 23291 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 88 | HFA3096BZ | RENESAS | RENESAS - HFA3096BZ - Bipolar Transistor Array, Complementary NPN and PNP, 8 V, 8 V, 37 mA, 37 mA, 150 mW | 2319 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 89 | NSVBC817-16LT1G | ONSEMI | ONSEMI - NSVBC817-16LT1G - Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount | 1855 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 90 | 2SC5658FHAT2L | ROHM | ROHM - 2SC5658FHAT2L - Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 150 mW, SOT-723, Surface Mount | 9762 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 91 | SMMUN2216LT1G | ONSEMI | ONSEMI - SMMUN2216LT1G - Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm | 22912 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 92 | CNY75A | VISHAY | VISHAY - CNY75A - Optocoupler, Transistor Output, 1 Channel, DIP, 6 Pins, 60 mA, 5 kV, 63 % | 7432 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 93 | BUTW92 | STMICROELECTRONICS | STMICROELECTRONICS - BUTW92 - Bipolar (BJT) Single Transistor, NPN, 250 V, 180 W, 60 A, 9 hFE | 1027 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 94 | DTA143EKAT146 | ROHM | ROHM - DTA143EKAT146 - Bipolar Pre-Biased / Digital Transistor, Single PNP, 50 V, 100 mA, 4.7 kohm, 4.7 kohm | 565 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 95 | SMMBT4403LT1G | ONSEMI | ONSEMI - SMMBT4403LT1G - Bipolar (BJT) Single Transistor, PNP, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount | 17994 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 96 | MJD42CRLG | ONSEMI | ONSEMI - MJD42CRLG - Bipolar (BJT) Single Transistor, PNP, 100 V, 6 A, 20 W, TO-252 (DPAK), Surface Mount | 2533 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 97 | MJD6039T4G | ONSEMI | ONSEMI - MJD6039T4G - Darlington Transistor, Darlington, NPN, 80 V, 20 W, 4 A, TO-252 (DPAK), 3 Pins | 16675 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 98 | HCPL-817-500E | BROADCOM | BROADCOM - HCPL-817-500E - Optocoupler, Transistor Output, 1 Channel, Surface Mount DIP, 4 Pins, 50 mA, 5 kV, 50 % | 24961 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 99 | TSM1NB60CP ROG | TAIWAN SEMICONDUCTOR | TAIWAN SEMICONDUCTOR - TSM1NB60CP ROG - Power MOSFET, N Channel, 600 V, 1 A, 8 ohm, TO-252 (DPAK), Surface Mount | 4634 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 100 | SUD40N08-16-E3 | VISHAY | VISHAY - SUD40N08-16-E3 - Power MOSFET, N Channel, 80 V, 40 A, 0.016 ohm, TO-252AA, Surface Mount | 6560 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 101 | BC847BPN,115 | NEXPERIA | Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A | 33200 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 102 | 2N7002 | DIOTEC SEMICONDUCTOR | Transistor: N-MOSFET; unipolar; 60V; 0.28A; Idm: 1.2A; 0.35W; SOT23 | 138733 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 103 | BC847B | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23 | 459506 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 104 | MMFTP3401 | DIOTEC SEMICONDUCTOR | Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -27A; 1.4W; SOT23 | 179794 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 105 | BC817-40 | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.8A; 310mW; SOT23 | 154649 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 106 | TIP122 | STMicroelectronics | Transistor: NPN; bipolar; Darlington; 100V; 5A; 65W; TO220AB | 1755 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 107 | BSS138-TP | MICRO COMMERCIAL COMPONENTS | Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.35W; SOT23 | 51912 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 108 | BDX54C | STMicroelectronics | Transistor: PNP; bipolar; Darlington; 100V; 8A; 60W; TO220AB | 6785 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 109 | BC817DPN,115 | NEXPERIA | Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A | 36453 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 110 | BC817-25 | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.8A; 310mW; SOT23 | 244725 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 111 | BC807-40 | DIOTEC SEMICONDUCTOR | Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23 | 329645 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 112 | FGH60N60SMD | ONSEMI | Transistor: IGBT; 600V; 60A; 300W; TO247-3 | 595 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 113 | IRF4905PBF | INFINEON TECHNOLOGIES | Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB | 3418 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 114 | AO3401A | ALPHA & OMEGA SEMICONDUCTOR | Transistor: P-MOSFET; unipolar; -30V; -4A; 1.4W; SOT23 | 3051 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 115 | BDX53C | STMicroelectronics | Transistor: NPN; bipolar; Darlington; 100V; 8A; 60W; TO220AB | 2824 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 116 | IRF7342TRPBF | INFINEON TECHNOLOGIES | Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8 | 4301 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 117 | BSS138PS,115 | NEXPERIA | Transistor: N-MOSFET x2; unipolar; 60V; 200mA; Idm: 1.2A; 420mW | 10057 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 118 | NTE6400 | NTE Electronics | Transistor: UJT; unipolar; 0.45W; TO39 | 2 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 119 | BD681 | STMicroelectronics | Transistor: NPN; bipolar; Darlington; 100V; 4A; 40W; SOT32 | 5648 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 120 | BC547B | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.1A; 500mW; TO92 | 68187 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 121 | SCT019HU120G3AG | STMicroelectronics | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A | Contact Us |
Min.: 1 Mult.: 1 |
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| 122 | PBLS4003D-QX | Nexperia | Digital Transistors PBLS4003D-Q/SOT457/SC-74 | 2320 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 123 | SQJQ160ER-T1_GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET | 945 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 124 | SQ2389CES-T1_BE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET | 2496 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 125 | SIHFU220-GE3 | Vishay Semiconductors | MOSFETs MOSFET N-CHANNEL 200V | 2995 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 126 | SIHFR9220TR-GE3 | Vishay Semiconductors | MOSFETs MOSFET P-CHANNEL 200V | 1940 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 127 | IAUMN04S7N006GAUMA1 | Infineon Technologies | MOSFETs 200 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology | 136 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 128 | IAUMN04S7N005GAUMA1 | Infineon Technologies | MOSFETs 250 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology | 2847 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 129 | IAUMN04S7N009GAUMA1 | Infineon Technologies | MOSFETs 200 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology | 152 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 130 | NSVT5551MR6T1G | onsemi | Bipolar Transistors - BJT NPN GENERAL-PURPOSE AMPLIFIER | 2235 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 131 | NSVT5401MR6T1G | onsemi | Bipolar Transistors - BJT PNP GENERAL-PURPOSE AMPLIFIER | 1943 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 132 | SI2392BDS-T1-BE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 100-V (D-S) MOSFET | 2950 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 133 | SIHG050N65SF-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 650V | 450 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 134 | SIRA14DDP-T1-UE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 30-V (D-S) MOSFET | 2950 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 135 | SI1425DH-T1-GE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 20-V (D-S) MOSFET | 2950 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 136 | SIHG100N65E-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 650V | 450 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 137 | SI2393DS-T1-BE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 30-V (D-S) MOSFET | 2735 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 138 | SI2319DDS-T1-BE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 40-V (D-S) MOSFET | 2325 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 139 | SI2122DS-T1-BE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 100-V (D-S) MOSFET | 2900 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 140 | SIB5215DK-T1-GE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 20-V (D-S) MOSFET | 2950 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 141 | SIHB240N65E-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 650V | 950 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 142 | SQ2361CEES-T1_BE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET | 2030 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 143 | SIRA12DDP-T1-UE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 30-V (D-S) MOSFET | 2800 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 144 | SISS4304DN-T1-UE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 30-V (D-S) MOSFET | 2950 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 145 | SI2399BDS-T1-GE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 20-V (D-S) MOSFET | 2915 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 146 | SI3425DV-T1-GE3 | Vishay Semiconductors | MOSFETs P-CHANNEL 20-V (D-S) MOSFET | 2950 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 147 | NSVT5551DW1T1G | onsemi | Bipolar Transistors - BJT NPN MULTI-CHIP | 2296 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 148 | SIHF620S-GE3 | Vishay Semiconductors | MOSFETs MOSFET N-CHANNEL 200V | 995 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 149 | DMT3009LSSQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SO-8 T&R 2.5K | 1733 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 150 | SIHF520S-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 100V | 995 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 151 | DE150-102N02A | IXYS | RF MOSFET Transistors RF Power MOSFET 1000V 2A | 36 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 152 | SGT350R70GTK | STMicroelectronics | GaN FETs 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor | Contact Us |
Min.: 1 Mult.: 1 |
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| 153 | IAUTN15S6N025TATMA1 | Infineon Technologies | MOSFETs 150 V, N-Ch, 2.5 mOhms max, Automotive MOSFET, TOLT (10x15) | 2424 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 154 | NSVBCP53MTWG | onsemi | Bipolar Transistors - BJT 80V, 1A, PNP, WDFNW3 2X2 | 1950 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 155 | IGD70R500D2SAUMA1 | Infineon Technologies | GaN FETs CoolGaN Transistor 700 V G5 | 1144 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 156 | IGB110S10S1XTMA1 | Infineon Technologies | GaN FETs CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm | 3244 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 157 | DI2A8N03PWK2-AQ | Diotec Semiconductor | MOSFETs PowerQFN 2x2, N+N, 30V, 2.8A, 72m?, 150C, AEC-Q101 | 4000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 158 | RD3N07BBHTL1 | ROHM Semiconductor | MOSFETs TO252 N-CH 80V 105A | 646 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 159 | ULN2003AT16-13 | Diodes Incorporated | Darlington Transistors Std Lin Interface TSSOP-16 T&R 2.5K | 2471 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 160 | BC817-25FSWQ-7 | Diodes Incorporated | Bipolar Transistors - BJT General Purpose Transistor U-DFN1412-3 T&R 5K | 30000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 161 | NSVMMUN2138LT1G | onsemi | Digital Transistors PNP Bipolar Digital Transistor (BRT) | 14913 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 162 | RY7P250BMTBC | ROHM Semiconductor | MOSFETs RY7P250BM is a power MOSFET with low-on resistance and high power package, suitable for Hot Swap Controller (HSC). | 1988 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 163 | IAUTN15S6N025ATMA1 | Infineon Technologies | MOSFETs 150 V, N-Ch, 2.5 mOhms max, Automotive MOSFET, TOLL (10x12) | 3900 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 164 | IKY120N75EH7XKSA1 | Infineon Technologies | IGBTs High speed and low saturation voltage 750 V TRENCHSTOP IGBT7 technology | 200 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 165 | AMMBT2222AM-HF | Comchip Technology | Bipolar Transistors - BJT AUTOMOTIVE TRANS NPN 75V 265mW SOT-723 | 7000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 166 | NSVMUN2132T1G | onsemi | Digital Transistors PNP Bipolar Digital Transistor (BRT) | 14860 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 167 | NSVMUN5134T1G | onsemi | Digital Transistors PNP Bipolar Digital Transistor (BRT) | Contact Us |
Min.: 1 Mult.: 1 |
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| 168 | MC1413DR2G | onsemi | Darlington Transistors High Voltage High Current Darlington | Contact Us |
Min.: 1 Mult.: 1 |
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| 169 | NSVMUN5216T1G | onsemi | Digital Transistors NPN Bipolar Digital Transistor (BRT) | 14980 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 170 | NSVBC115EPDXV6T1G | onsemi | Digital Transistors SS SOT563 RSTR XSTR TR | 3905 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
