120 Products
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| SN: | Part No. | Manufacturer | Description | Stock | Pricing (Sort by price) | Buy |
| 1 | SFH6156-2 | VISHAY | VISHAY - SFH6156-2 - Optocoupler, Transistor Output, 1 Channel, Surface Mount DIP, 4 Pins, 60 mA, 5.3 kV, 63 % | 76182 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 2 | DMG1012UW | DIODES INC. | DIODES INC. - DMG1012UW - Power MOSFET, Enhancement Mode, N Channel, 20 V, 1 A, 0.45 ohm, SOT-323, Surface Mount | 195203 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 3 | BSC123N08NS3GATMA1 | INFINEON | INFINEON - BSC123N08NS3GATMA1 - Power MOSFET, N Channel, 80 V, 55 A, 0.0123 ohm, PG-TDSON, Surface Mount | 77930 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 4 | STW88N65M5 | STMICROELECTRONICS | STMICROELECTRONICS - STW88N65M5 - Power MOSFET, N Channel, 650 V, 84 A, 0.024 ohm, TO-247, Through Hole | 1519 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 5 | BSS84 | ONSEMI | ONSEMI - BSS84 - Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount | 312000 *LT 7-14 W Days.. |
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Min.: 3000 Mult.: 3000 |
| 6 | FDD86252 | ONSEMI | ONSEMI - FDD86252 - Power MOSFET, N Channel, 150 V, 27 A, 0.052 ohm, TO-252 (DPAK), Surface Mount | 96286 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 7 | IRF3205PBF | INFINEON | INFINEON - IRF3205PBF - Power MOSFET, N Channel, 55 V, 110 A, 8000 µohm, TO-220AB, Through Hole | 41751 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 8 | DMG2305UX-7 | DIODES INC. | DIODES INC. - DMG2305UX-7 - Power MOSFET, P Channel, 20 V, 4.2 A, 0.052 ohm, SOT-23, Surface Mount | 329573 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 9 | STH3N150-2 | STMICROELECTRONICS | STMICROELECTRONICS - STH3N150-2 - Power MOSFET, N Channel, 1.5 kV, 2.5 A, 9 ohm, H2PAK-2, Surface Mount | 41834 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 10 | IAUT300N08S5N012ATMA2 | INFINEON | INFINEON - IAUT300N08S5N012ATMA2 - Power MOSFET, N Channel, 80 V, 300 A, 1200 µohm, HSOF, Surface Mount | 33914 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 11 | IPB048N15N5ATMA1 | INFINEON | INFINEON - IPB048N15N5ATMA1 - Power MOSFET, N Channel, 150 V, 120 A, 4800 µohm, TO-263 (D2PAK), Surface Mount | 4242 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 12 | IKW40N120H3FKSA1 | INFINEON | INFINEON - IKW40N120H3FKSA1 - IGBT, 40 A, 2.4 V, 483 W, 1.2 kV, TO-247, 3 Pins | 13741 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 13 | PS2501L-1-F3-A | RENESAS | RENESAS - PS2501L-1-F3-A - Optocoupler, 1 Channel, Surface Mount DIP, 4 Pins, 80 mA, 5 kV, 80 % | 56875 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 14 | TLP785F(D4GLT7,F(C | TOSHIBA | TOSHIBA - TLP785F(D4GLT7,F(C - Optocoupler, 1 Channel, SMD, 4 Pins, 60 mA, 5 kV, 50 % | 16215 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 15 | MMBFJ108 | ONSEMI | ONSEMI - MMBFJ108 - JFET Transistor, JFET, -25 V, 80 mA, -10 V, SOT-23, 3 Pin, 150 °C | 189487 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 16 | 2N7002W-7-F | DIODES INC. | DIODES INC. - 2N7002W-7-F - Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-323, Surface Mount | 956618 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 17 | STD20NF06LT4 | STMICROELECTRONICS | STMICROELECTRONICS - STD20NF06LT4 - Power MOSFET, N Channel, 60 V, 24 A, 0.04 ohm, TO-252 (DPAK), Surface Mount | 84362 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 18 | STW52NK25Z | STMICROELECTRONICS | STMICROELECTRONICS - STW52NK25Z - Power MOSFET, N Channel, 250 V, 26 A, 0.033 ohm, TO-247, Through Hole | 1863 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 19 | SIA931DJ-T1-GE3 | VISHAY | VISHAY - SIA931DJ-T1-GE3 - Dual MOSFET, P Channel, 30 V, 30 V, 4.5 A, 4.5 A, 0.052 ohm | 257400 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 20 | SUD50N04-8M8P-4GE3 | VISHAY | VISHAY - SUD50N04-8M8P-4GE3 - Power MOSFET, N Channel, 40 V, 50 A, 8800 µohm, TO-252 (DPAK), Surface Mount | 49015 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 21 | NDC7001C | ONSEMI | ONSEMI - NDC7001C - Dual MOSFET, Complementary N and P Channel, 50 V, 50 V, 340 mA, 340 mA, 1 ohm | 74587 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 22 | STL15DN4F5 | STMICROELECTRONICS | STMICROELECTRONICS - STL15DN4F5 - Dual MOSFET, N Channel, 40 V, 40 V, 15 A, 15 A, 8000 µohm | 2864 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 23 | SUM80090E-GE3 | VISHAY | VISHAY - SUM80090E-GE3 - Power MOSFET, N Channel, 150 V, 128 A, 9000 µohm, TO-263 (D2PAK), Surface Mount | 14016 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 24 | BSZ042N06NSATMA1 | INFINEON | INFINEON - BSZ042N06NSATMA1 - Power MOSFET, N Channel, 60 V, 40 A, 4200 µohm, TSDSON, Surface Mount | 134842 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 25 | STP20NM60FD | STMICROELECTRONICS | STMICROELECTRONICS - STP20NM60FD - Power MOSFET, N Channel, 600 V, 20 A, 0.29 ohm, TO-220, Through Hole | 17821 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 26 | IPG20N06S4L11ATMA1 | INFINEON | INFINEON - IPG20N06S4L11ATMA1 - Dual MOSFET, N Channel, 60 V, 60 V, 20 A, 20 A, 9500 µohm | 22658 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 27 | BSC0921NDIATMA1 | INFINEON | INFINEON - BSC0921NDIATMA1 - Dual MOSFET, N Channel, 30 V, 30 V, 40 A, 40 A, 3900 µohm | 10563 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 28 | IPD50P04P4L11ATMA2 | INFINEON | INFINEON - IPD50P04P4L11ATMA2 - Power MOSFET, P Channel, 40 V, 50 A, 0.0106 ohm, TO-252 (DPAK), Surface Mount | 67546 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 29 | 2SAR573D3FRATL | ROHM | ROHM - 2SAR573D3FRATL - Bipolar (BJT) Single Transistor, PNP, 50 V, 3 A, 10 W, TO-252 (DPAK), Surface Mount | 2275 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 30 | DTC123YEFRATL | ROHM | ROHM - DTC123YEFRATL - Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm | 2949 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 31 | BCX52TF | NEXPERIA | NEXPERIA - BCX52TF - Bipolar (BJT) Single Transistor, PNP, 60 V, 1 A, 500 mW, SC-62, Surface Mount | 3430 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 32 | SFH6286-3 | VISHAY | VISHAY - SFH6286-3 - Optocoupler, Transistor Output, 1 Channel, Surface Mount DIP, 4 Pins, 50 mA, 5.3 kV, 100 % | 36365 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 33 | 2N7002W-7-F | DIODES INC. | DIODES INC. - 2N7002W-7-F - Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-323, Surface Mount | 956618 *LT 7-14 W Days.. |
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Min.: 500 Mult.: 5 |
| 34 | FDN358P | ONSEMI | ONSEMI - FDN358P - Power MOSFET, P Channel, 30 V, 1.6 A, 0.125 ohm, SOT-23, Surface Mount | 33020 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 35 | FDS8447 | ONSEMI | ONSEMI - FDS8447 - Power MOSFET, N Channel, 40 V, 12.8 A, 0.0105 ohm, SOIC, Surface Mount | 29404 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 36 | STD7N65M2 | STMICROELECTRONICS | STMICROELECTRONICS - STD7N65M2 - Power MOSFET, N Channel, 650 V, 5 A, 0.98 ohm, TO-252 (DPAK), Surface Mount | 3070 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 37 | SI4896DY-T1-GE3 | VISHAY | VISHAY - SI4896DY-T1-GE3 - Power MOSFET, N Channel, 80 V, 6.7 A, 0.0165 ohm, NSOIC, Surface Mount | 16302 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 38 | IPD95R2K0P7ATMA1 | INFINEON | INFINEON - IPD95R2K0P7ATMA1 - Power MOSFET, N Channel, 950 V, 4 A, 2 ohm, TO-252 (DPAK), Surface Mount | 26225 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 39 | BSC028N06NSTATMA1 | INFINEON | INFINEON - BSC028N06NSTATMA1 - Power MOSFET, N Channel, 60 V, 100 A, 2800 µohm, TDSON, Surface Mount | 15502 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 40 | PSMN7R6-100BSEJ | NEXPERIA | NEXPERIA - PSMN7R6-100BSEJ - Power MOSFET, N Channel, 100 V, 75 A, 6500 µohm, TO-263, Surface Mount | 5894 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 41 | FCD3400N80Z | ONSEMI | ONSEMI - FCD3400N80Z - Power MOSFET, N Channel, 800 V, 2 A, 2.75 ohm, TO-252 (DPAK), Surface Mount | 2060 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 42 | IPT030N12N3GATMA1 | INFINEON | INFINEON - IPT030N12N3GATMA1 - Power MOSFET, N Channel, 120 V, 237 A, 2500 µohm, HSOF, Surface Mount | 1441 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 43 | PMST3904,115 | NEXPERIA | NEXPERIA - PMST3904,115 - Bipolar (BJT) Single Transistor, Switching, NPN, 40 V, 200 mA, 200 mW, SOT-323, Surface Mount | 74291 *LT 7-14 W Days.. |
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Min.: 500 Mult.: 5 |
| 44 | MMUN2131LT1G | ONSEMI | ONSEMI - MMUN2131LT1G - Bipolar Pre-Biased / Digital Transistor, Single PNP, 50 V, 100 mA, 2.2 kohm, 2.2 kohm | 6911 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 45 | AC848BQ-13 | DIODES INC. | DIODES INC. - AC848BQ-13 - Bipolar (BJT) Single Transistor, NPN, 30 V, 100 mA, 350 mW, SOT-23, Surface Mount | 9765 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 46 | BC856BQCZ | NEXPERIA | NEXPERIA - BC856BQCZ - Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 450 mW, DFN1412D, Surface Mount | 4140 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 47 | BC856BQCZ | NEXPERIA | NEXPERIA - BC856BQCZ - Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 450 mW, DFN1412D, Surface Mount | 4140 *LT 7-14 W Days.. |
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Min.: 500 Mult.: 5 |
| 48 | FDC638P | ONSEMI | ONSEMI - FDC638P - Power MOSFET, P Channel, 20 V, 4.5 A, 0.048 ohm, SuperSOT, Surface Mount | 49157 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 49 | IRFS7434TRLPBF | INFINEON | INFINEON - IRFS7434TRLPBF - Power MOSFET, StrongIRFET™, N Channel, 40 V, 195 A, 1600 µohm, TO-263AB, Surface Mount | 773 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 50 | IRF3805PBF | INFINEON | INFINEON - IRF3805PBF - Power MOSFET, N Channel, 55 V, 210 A, 3300 µohm, TO-220AB, Through Hole | 997 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 51 | IPP60R080P7XKSA1 | INFINEON | INFINEON - IPP60R080P7XKSA1 - Power MOSFET, N Channel, 600 V, 37 A, 0.069 ohm, TO-220, Through Hole | 494 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 52 | STP240N10F7 | STMICROELECTRONICS | STMICROELECTRONICS - STP240N10F7 - Power MOSFET, N Channel, 100 V, 110 A, 2850 µohm, TO-220AB, Through Hole | 2296 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 53 | NTJD4105CT2G | ONSEMI | ONSEMI - NTJD4105CT2G - Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 630 mA, 630 mA, 0.29 ohm | 63780 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 54 | SI2338DS-T1-GE3 | VISHAY | VISHAY - SI2338DS-T1-GE3 - Power MOSFET, N Channel, 30 V, 6 A, 0.028 ohm, SOT-23, Surface Mount | 36000 *LT 7-14 W Days.. |
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Min.: 3000 Mult.: 3000 |
| 55 | FDMC7208S | ONSEMI | ONSEMI - FDMC7208S - Dual MOSFET, N Channel, 30 V, 30 V, 26 A, 26 A, 4700 µohm | 2094 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 56 | FDP036N10A | ONSEMI | ONSEMI - FDP036N10A - Power MOSFET, N Channel, 100 V, 120 A, 3200 µohm, TO-220AB, Through Hole | 771 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 57 | SCT3160KW7TL | ROHM | ROHM - SCT3160KW7TL - Silicon Carbide MOSFET, Single, N Channel, 17 A, 1.2 kV, 0.16 ohm, TO-263 (D2PAK) | 558 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 58 | NVTFS4C05NWFTAG | ONSEMI | ONSEMI - NVTFS4C05NWFTAG - Power MOSFET, N Channel, 30 V, 102 A, 2900 µohm, WDFN, Surface Mount | 2630 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 59 | TPHR9003NL1,LQ(M | TOSHIBA | TOSHIBA - TPHR9003NL1,LQ(M - Power MOSFET, N Channel, 30 V, 150 A, 770 µohm, SOP, Surface Mount | 9804 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 60 | AIKW50N60CTXKSA1 | INFINEON | INFINEON - AIKW50N60CTXKSA1 - IGBT, 80 A, 1.5 V, 333 W, 600 V, TO-247, 3 Pins | 239 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 61 | 1541411NBA210 | WURTH ELEKTRONIK | WURTH ELEKTRONIK - 1541411NBA210 - Phototransistor, 940 nm, 120 °, 150 mW, 2 Pins, 1411, WL-STTW | 1198 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 62 | PMST3904,115 | NEXPERIA | NEXPERIA - PMST3904,115 - Bipolar (BJT) Single Transistor, Switching, NPN, 40 V, 200 mA, 200 mW, SOT-323, Surface Mount | 74291 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 63 | 2SAR533P5T100 | ROHM | ROHM - 2SAR533P5T100 - Bipolar (BJT) Single Transistor, PNP, 50 V, 3 A, 500 mW, SOT-89, Surface Mount | 855 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 64 | NDC7001C | ONSEMI | ONSEMI - NDC7001C - Dual MOSFET, Complementary N and P Channel, 50 V, 50 V, 340 mA, 340 mA, 1 ohm | 74587 *LT 7-14 W Days.. |
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Min.: 100 Mult.: 5 |
| 65 | SI4162DY-T1-GE3 | VISHAY | VISHAY - SI4162DY-T1-GE3 - Power MOSFET, N Channel, 30 V, 19.3 A, 7900 µohm, SOIC, Surface Mount | 73235 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 66 | SQA401EJ-T1_GE3 | VISHAY | VISHAY - SQA401EJ-T1_GE3 - Power MOSFET, P Channel, 20 V, 3.75 A, 0.125 ohm, PowerPAK SC-70, Surface Mount | 6855 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 67 | SI7619DN-T1-GE3 | VISHAY | VISHAY - SI7619DN-T1-GE3 - Power MOSFET, P Channel, 30 V, 24 A, 0.021 ohm, PowerPAK 1212, Surface Mount | 14904 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 68 | G3R45MT17K | GENESIC | GENESIC - G3R45MT17K - Silicon Carbide MOSFET, Single, N Channel, 61 A, 1.7 kV, 0.045 ohm, TO-247 | 11 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 69 | RD3H160SPFRATL | ROHM | ROHM - RD3H160SPFRATL - Power MOSFET, P Channel, 45 V, 16 A, 0.035 ohm, TO-252 (DPAK), Surface Mount | 7622 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 70 | NTBG160N120SC1 | ONSEMI | ONSEMI - NTBG160N120SC1 - Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 19.5 A, 1.2 kV, 0.16 ohm, TO-263HV (D2PAK) | 487 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 71 | R8006KNXC7G | ROHM | ROHM - R8006KNXC7G - Power MOSFET, N Channel, 800 V, 6 A, 0.9 ohm, TO-220FM, Through Hole | 35 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 72 | DMTH61M8SPS-13 | DIODES INC. | DIODES INC. - DMTH61M8SPS-13 - Power MOSFET, N Channel, 60 V, 215 A, 1100 µohm, PowerDI5060, Surface Mount | 1058 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 73 | PSMN102-200Y,115 | NEXPERIA | NEXPERIA - PSMN102-200Y,115 - Power MOSFET, N Channel, 200 V, 21.5 A, 0.086 ohm, LFPAK56, Surface Mount | 9962 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 74 | LSIC1MO120E0080 | LITTELFUSE | LITTELFUSE - LSIC1MO120E0080 - Silicon Carbide MOSFET, Single, N Channel, 39 A, 1.2 kV, 0.08 ohm, TO-247 | 906 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 75 | TPH11006NL,LQ(S | TOSHIBA | TOSHIBA - TPH11006NL,LQ(S - Power MOSFET, N Channel, 60 V, 40 A, 0.0114 ohm, SOP, Surface Mount | 41897 *LT 7-14 W Days.. |
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Min.: 100 Mult.: 5 |
| 76 | IPT054N15N5ATMA1 | INFINEON | INFINEON - IPT054N15N5ATMA1 - Power MOSFET, N Channel, 150 V, 143 A, 4600 µohm, HSOF, Surface Mount | 1953 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 77 | SIHP25N60EFL-GE3 | VISHAY | VISHAY - SIHP25N60EFL-GE3 - Power MOSFET, N Channel, 600 V, 25 A, 0.146 ohm, TO-220AB, Through Hole | 848 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 78 | IPLK70R900P7ATMA1 | INFINEON | INFINEON - IPLK70R900P7ATMA1 - Power MOSFET, N Channel, 700 V, 5.7 A, 0.74 ohm, ThinPAK 5x6, Surface Mount | 510 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 79 | SI1034CX-T1-GE3 | VISHAY | VISHAY - SI1034CX-T1-GE3 - Dual MOSFET, N Channel, 20 V, 20 V, 610 mA, 610 mA, 0.33 ohm | 3000 *LT 7-14 W Days.. |
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Min.: 3000 Mult.: 3000 |
| 80 | TPHR9003NL1,LQ(M | TOSHIBA | TOSHIBA - TPHR9003NL1,LQ(M - Power MOSFET, N Channel, 30 V, 150 A, 770 µohm, SOP, Surface Mount | 9804 *LT 7-14 W Days.. |
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Min.: 100 Mult.: 1 |
| 81 | IMBG65R107M1HXTMA1 | INFINEON | INFINEON - IMBG65R107M1HXTMA1 - Silicon Carbide MOSFET, Single, N Channel, 24 A, 650 V, 0.107 ohm, TO-263 | 26 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 82 | IPLK70R900P7ATMA1 | INFINEON | INFINEON - IPLK70R900P7ATMA1 - Power MOSFET, N Channel, 700 V, 5.7 A, 0.74 ohm, ThinPAK 5x6, Surface Mount | 510 *LT 7-14 W Days.. |
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Min.: 100 Mult.: 1 |
| 83 | SIHB21N65EF-GE3 | VISHAY | VISHAY - SIHB21N65EF-GE3 - Power MOSFET, N Channel, 650 V, 21 A, 0.18 ohm, TO-263 (D2PAK), Surface Mount | 967 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 84 | SI2301CDS-T1-GE3 | VISHAY | VISHAY - SI2301CDS-T1-GE3 - Power MOSFET, P Channel, 20 V, 3.1 A, 0.112 ohm, TO-236, Surface Mount | 423000 *LT 7-14 W Days.. |
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Min.: 3000 Mult.: 3000 |
| 85 | IPT054N15N5ATMA1 | INFINEON | INFINEON - IPT054N15N5ATMA1 - Power MOSFET, N Channel, 150 V, 143 A, 4600 µohm, HSOF, Surface Mount | 1953 *LT 7-14 W Days.. |
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Min.: 100 Mult.: 1 |
| 86 | TPH11006NL,LQ(S | TOSHIBA | TOSHIBA - TPH11006NL,LQ(S - Power MOSFET, N Channel, 60 V, 40 A, 0.0114 ohm, SOP, Surface Mount | 41897 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 87 | TLP785F(D4GLT7,F(C | TOSHIBA | TOSHIBA - TLP785F(D4GLT7,F(C - Optocoupler, 1 Channel, SMD, 4 Pins, 60 mA, 5 kV, 50 % | 16215 *LT 7-14 W Days.. |
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Min.: 100 Mult.: 5 |
| 88 | VEMT3700F-GS08 | VISHAY | VISHAY - VEMT3700F-GS08 - Phototransistor, Silicon, NPN, 940 nm, 120 °, 100 mW, 2 Pins, PLCC | 69885 *LT 7-14 W Days.. |
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Min.: 100 Mult.: 1 |
| 89 | GD1400HFX170P2S | STARPOWER | STARPOWER - GD1400HFX170P2S - IGBT Module, Half Bridge, 2.342 kA, 1.95 V, 9.37 kW, 150 °C, Module | 2 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 90 | GD50HFX170C1S | STARPOWER | STARPOWER - GD50HFX170C1S - IGBT Module, Half Bridge, 100 A, 1.85 V, 418 W, 150 °C, Module | 25 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 91 | NXH80T120L3Q0S3G | ONSEMI | ONSEMI - NXH80T120L3Q0S3G - IGBT Module, Dual [Half Bridge], 75 A, 1.7 V, 188 W, 175 °C, Module | 1 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 92 | MUN5311DW1T1G | ONSEMI | ONSEMI - MUN5311DW1T1G - Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm | 82400 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 93 | HMHA281 | ONSEMI | ONSEMI - HMHA281 - Optocoupler, Transistor Output, 1 Channel, SSOP, 4 Pins, 50 mA, 3.75 kV, 50 % | 13336 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 94 | STP6N95K5 | STMICROELECTRONICS | STMICROELECTRONICS - STP6N95K5 - Power MOSFET, N Channel, 950 V, 9 A, 1 ohm, TO-220AB, Through Hole | 838 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 95 | NVMFD5C446NLWFT1G | ONSEMI | ONSEMI - NVMFD5C446NLWFT1G - Dual MOSFET, N Channel, 40 V, 40 V, 145 A, 145 A, 2200 µohm | 2455 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 96 | SIR122DP-T1-RE3 | VISHAY | VISHAY - SIR122DP-T1-RE3 - Power MOSFET, N Channel, 80 V, 59.6 A, 7400 µohm, PowerPAK SO, Surface Mount | 43482 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 97 | MIC94050YM4-TR | MICROCHIP | MICROCHIP - MIC94050YM4-TR - Power MOSFET, P Channel, 6 V, 1.8 A, 0.125 ohm, SOT-143, Surface Mount | 2182 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 98 | IPD95R450P7ATMA1 | INFINEON | INFINEON - IPD95R450P7ATMA1 - Power MOSFET, N Channel, 950 V, 14 A, 0.45 ohm, TO-252 (DPAK), Surface Mount | 20103 *LT 7-14 W Days.. |
|
Min.: 5 Mult.: 5 |
| 99 | SIHG065N60E-GE3 | VISHAY | VISHAY - SIHG065N60E-GE3 - Power MOSFET, N Channel, 600 V, 40 A, 0.065 ohm, TO-247AC, Through Hole | 791 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 100 | IPW60R060C7XKSA1 | INFINEON | INFINEON - IPW60R060C7XKSA1 - Power MOSFET, N Channel, 600 V, 35 A, 0.052 ohm, TO-247, Through Hole | 615 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 101 | 2N7002 | DIOTEC SEMICONDUCTOR | Transistor: N-MOSFET; unipolar; 60V; 0.28A; Idm: 1.2A; 0.35W; SOT23 | 173670 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 102 | BC817-40 | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.8A; 310mW; SOT23 | 322788 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 103 | BC847B | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23 | 437720 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 104 | MMFTP3401 | DIOTEC SEMICONDUCTOR | Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -27A; 1.4W; SOT23 | 119119 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 105 | NTE6400 | NTE Electronics | Transistor: UJT; unipolar; 0.45W; TO39 | 2 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 106 | BC817DPN,115 | NEXPERIA | Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A | 39468 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 107 | TIP122 | STMicroelectronics | Transistor: NPN; bipolar; Darlington; 100V; 5A; 65W; TO220AB | 5472 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 108 | STGW20NC60VD | STMicroelectronics | Transistor: IGBT; 600V; 30A; 200W; TO247-3 | 1686 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 109 | BSS138-TP | MICRO COMMERCIAL COMPONENTS | Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.35W; SOT23 | 118803 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 110 | BC847BPN,115 | NEXPERIA | Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A | 13675 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 111 | BDX54C | STMicroelectronics | Transistor: PNP; bipolar; Darlington; 100V; 8A; 60W; TO220AB | 9142 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 112 | BC547B | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.1A; 500mW; TO92 | 112811 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 113 | FGH60N60SMD | ONSEMI | Transistor: IGBT; 600V; 60A; 300W; TO247-3 | 851 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 114 | BC807-40 | DIOTEC SEMICONDUCTOR | Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23 | 206598 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 115 | IRF540NPBF | INFINEON TECHNOLOGIES | Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB | 3116 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 116 | MMBTA28-7-F | DIODES INCORPORATED | Transistor: NPN; bipolar; Darlington; 80V; 0.5A; 310mW; SOT23 | 5840 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 117 | BC817-25 | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 45V; 0.8A; 310mW; SOT23 | 194152 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 118 | IRF4905PBF | INFINEON TECHNOLOGIES | Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB | 5902 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 119 | IRLML6402TRPBF | INFINEON TECHNOLOGIES | Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23 | 25051 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
| 120 | BSS138PS,115 | NEXPERIA | Transistor: N-MOSFET x2; unipolar; 60V; 200mA; Idm: 1.2A; 420mW | 10770 *LT 7-14 W Days.. |
|
Min.: 1 Mult.: 1 |
